MOS Capacitor
Characteristics of MOSFET
MOSFET
MOSFET: Enhancement Mode
Capacitor With A Dielectric
Electrostatic Boundary Conditions in Dielectrics
您也可能阅读
通过共同作者、期刊和引用图与本文相关的文章。
Huiyu Nong1, Junyang Tan1, Yujie Sun1
1Shenzhen Geim Graphene Center, Shenzhen Key Laboratory of Advanced Layered Materials for Value-added Applications, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua UniversityRINGGOLD, Shenzhen 518055, P. R. China.
研究人员成功将铜成1T
科学领域:
背景情况:
研究的目的:
主要方法:
主要成果:
结论: