HfxZr1-xO2

Florian Wunderwald1,2, Bohan Xu1, Alfred Kersch3

  • 1NaMLab gGmbH, Noethnitzer Str. 64 a, 01187, Dresden, Germany.

概括

在HfxZr1-xO2薄膜中的拉伸应变促进铁电或形相形成,以唤醒自由的非挥发性记忆. 最佳的铁电性能是在0.4-0.6%的平面内拉伸力应变下实现的.

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