在HfxZr1-xO2薄膜中应变和相位形成之间的相互作用
Florian Wunderwald1,2, Bohan Xu1, Alfred Kersch3
1NaMLab gGmbH, Noethnitzer Str. 64 a, 01187, Dresden, Germany.
Small (Weinheim an der Bergstrasse, Germany)
|February 4, 2025
概括
在HfxZr1-xO2薄膜中的拉伸应变促进铁电或形相形成,以唤醒自由的非挥发性记忆. 最佳的铁电性能是在0.4-0.6%的平面内拉伸力应变下实现的.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术 纳米技术
背景情况:
- 氧化-氧化 (HfxZr1-xO2) 薄膜由于其CMOS兼容性,对非易失性记忆有很大的希望.
- 在HfxZr1-xO2中的多态性阻碍了稳定的铁电特性,这对于无唤醒应用至关重要.
研究的目的:
- 研究平面内拉伸应变对HfxZr1-xO2薄膜相位形成的影响.
- 了解应变相形成相互作用,以优化原始状态下的铁电性质.
主要方法:
- 原子层沉积 (ALD) 的HfxZr1-xO2薄膜具有不同的厚度和组成.
- 双轴内平面拉伸应变的应用.
- 电气表征包括切换场和残余极化测量.
主要成果:
- 在HfxZr1-xO2膜中显示了平面内拉伸应变和相位形成之间的相关性.
- 在0.4-0.6%的内平面拉伸应变范围内观察到最佳的铁电性能.
- 应变影响初始阶段形成,这反过来又影响电气循环过程中的应变.
结论:
- 在平面内拉伸应变是促进HfxZr1-xO2膜中铁电正弦相的一个关键因素.
- 了解应变相相互作用是实现无唤醒铁电记忆器件的关键.
- 这项研究为专门的记忆应用量身定制HfxZr1-xO2膜提供了见解.
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