在CrSH单层中使用DFT+U和BO-MD计算的半金属和铁磁相
Akkarach Sukserm1, Jakkapat Seeyangnok1, Udomsilp Pinsook1
1Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand. Udomsilp.P@chula.ac.th.
Physical chemistry chemical physics : PCCP
|February 4, 2025
概括
硫化 (CrSH) 单层显示出对自旋电子的希望. 稳定的1T阶段是半导体,1H阶段是半金属,过渡到1T阶段.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学的计算化学
背景情况:
- 二维 (2D) 材料具有独特的电子和磁性特性.
- 基于的石化化物正在成为先进电子应用的潜在候选物.
研究的目的:
- 综合研究CrSH单层1T和1H相的结构,电子,磁和振动特性.
- 评估这些阶段的稳定性和潜在应用.
主要方法:
- 密度函数理论 (DFT) +U计算,哈巴德U值为5.52 eV.
- 波恩-奥本海默分子动力学 (BO-MD) 模拟.
- 使用有限位移法进行的Phonon计算,并对物理精度进行了校正.
主要成果:
- 1T-CrSH阶段是动态和热力学稳定的,表现出半导体行为 (1.1 eV带间隙) 和铁磁性 (3.0 μB/Cr).
- 1H-CrSH阶段是一个转移稳定的半金属 (HM) 阶段,过渡到300 K的1T阶段.
- 波计算解决了虚假的虚构频率,确保了准确的振动分析.
结论:
- CrSH单层,特别是1T阶段,是稳定的,并且具有适合于自旋电子和山谷电子设备的特性.
- 阶段工程为定制应用提供了一条调整CrSH单层电子属性的途径.
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