相关实验视频

Updated: May 29, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

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亚纳米等效氧化物厚度和值电压控制通过单层MoS2晶体管上的种子层实现

Jung-Soo Ko1, Sol Lee2,3, Robert K A Bennett1

  • 1Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

Nano letters
|February 4, 2025
PubMed
概括

研究人员开发了一种简单的方法,可以在2D半导体上制造超薄门绝缘体,例如二硫化 (MoS). 这一突破使得低功率晶体管的制造成为可能,其性能得到改善,能耗降低.

关键词:
两维材料是二维材料.相当于氧化物厚度的氧化物门的堆 门的堆门电压的门电压是什么晶体管是一种晶体管.

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