MoS2

Sudipta Majumder1, Sarika Lohkna2, Vaibhav Walve1

  • 1Department of Physics, Indian Institute of Science Education and Research, Pune, Maharashtra 411008, India.

PubMed
概括

在二硫化物 (MoS2) 中的二硫空缺等缺陷会产生浅的供体状态,增强电子跳跃并提高导电性. 这种缺陷工程为高级应用程序定制2D材料.

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