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Updated: May 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Published on: May 13, 2020

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通过铁电诱导电流调制的非挥发性重配置晶体管

Daniele Nazzari1, Lukas Wind1, Masiar Sistani1

  • 1Institute of Solid State Electronics, Technische Universität Wien, Gußhausstraße 25-25a, 1040 Vienna, Austria.

ACS applied materials & interfaces
|February 6, 2025
PubMed
概括

新的可重新配置的场效应晶体管 (RFET) 与铁电氧化物 (HZO) 集成,使逻辑内存 (LiM) 硬件成为可能. 这项创新支持低功耗人工神经网络 (ANN) 执行,并嵌入了自学功能.

关键词:
电荷注入调制方法铁电公司Hf0.5Zr0.5O2 (HZO)在内存中的逻辑 (LiM)多层次操作多层次操作.非挥发性的重构能力.可重新配置的场效应晶体管 (RFET)

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