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Updated: May 29, 2025

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原子尺度间隙和缺陷工程用于在原子薄的GeS中增强磁性和光电子特性

Anthony C Iloanya1,2, Srihari M Kastuar1,2, Gour Jana1,2

  • 1Department of Physics, Lehigh University, Bethlehem, PA, 18015, USA.

Scientific reports
|February 6, 2025
PubMed
概括

染色体间隙和硫空隙在硫化 (GeS) 中产生磁性基态. 这种缺陷工程增强了光电子特性,显示了磁光学和数据存储应用的潜力.

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相关概念视频

Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
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