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Updated: May 29, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

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添加的氧化:一种具有高耐久性的铁电薄膜,具有证明的负电容

Ehsan Ansari1, Niccolò Martinolli1, Emeric Hartmann1,2

  • 1Nanoelectronic Device Laboratory, EPFL, Lausanne 1015, Switzerland.

Nano letters
|February 7, 2025
PubMed
概括

研究人员开发了一种新的氧化 (V:HfO2) 薄膜,用于电子产品. 这种强大的铁电材料显示出对非易失性记忆,神经形态计算和先进传感器的承诺.

关键词:
它是CMOS兼容的.原子层沉积 (ALD) 是指原子层的沉积.铁电薄膜的薄膜是铁电薄膜的高耐力 耐力 耐力负电容 负电容是指负电容.添加瓦纳的氧化 (V:HfO2) 和氧化 (V:HfO2).

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Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain08:00

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