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Updated: May 28, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

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对于极大功率和面积缩放的ZnO-Te反双极开关的应用

Jae Hyeon Jun1, Yongsu Lee2, Hae-Won Lee1

  • 1Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, Republic of Korea.

ACS applied materials & interfaces
|February 10, 2025
PubMed
概括

这项研究引入了一种使用超薄 ZnO 和 Te 层的抗双极开关 (AAS). 这种新型的半导体设备可以显著减少电路大小,并提高电子应用的计算效率.

关键词:
这是一个CMOS兼容的系统.这是一种抗双极性抗体.异质连接异质连接逻辑电路的逻辑电路是一个逻辑电路.多价值逻辑是多价值的逻辑.

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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