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相关概念视频

MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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超导二极管内存的电流驱动磁化切换.

Yang Cheng1, Qingyuan Shu1, Haoran He1

  • 1Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.

Advanced materials (Deerfield Beach, Fla.)
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PubMed
概括
此摘要是机器生成的。

这项研究证明了超导磁化二极管效应 (SMDE) 在超导体-铁磁体异构结构中. 这种效应可以通过测量超导率来读取磁化状态,从而推进超导自旋电子学.

关键词:
冰冷的记忆力 冰冷的记忆力磁化二极管是一种磁化二极管旋转轨道扭矩超导二极管效应超导二极管效应超导二极管效应超导自旋电子技术的超导体

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科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 材料科学 材料科学 材料科学

背景情况:

  • 将超导体 (SC) 堆叠在铁磁材料 (FM) 上会影响超导,从而导致自旋三重态和拓超导.
  • 超导二极管效应,以非相互传输为特征,当SC-FM异构结构中时间和反转对称性被打破时出现.

研究的目的:

  • 为了证明超导磁化二极管效应 (SMDE) 在超导体-铁磁体异构结构中.
  • 通过测量超导率来建立读取磁化状态的方法.

主要方法:

  • 制造超导体 - 铁磁体异构结构.
  • 在不同的磁化状态下对临界电流的描述.
  • 使用电流驱动的旋转轨道扭矩进行磁化操纵.

主要成果:

  • 在SC-FM异构结构中证明了SMDE的存在.
  • 展示了磁化状态到超导性的独特映射.
  • 实现了超导二极管磁电阻的理想无限开/关比.

结论:

  • 通过测量超导率,SMDE提供了一种阅读磁化状态的新方法.
  • 这项工作通过克服传统磁阻的局限性,推进了超导自旋电子学.
  • 这些发现有助于开发新的超导自旋电子设备.