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Updated: May 28, 2025

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适合氧气空位的n型MXenes,用于高效的热电能收集

Zhiliang Wan1, Xiaofang Liu1, Cheng Liu1

  • 1Jiangxi Provincial Key Laboratory of Flexible Electronics, Jiangxi Science and Technology Normal University, Nanchang, 330013, China.

Small (Weinheim an der Bergstrasse, Germany)
|February 12, 2025
PubMed
概括

通过电化学方法调节Ti3C2TxMXene中的氧空位 (VO),可以显著提高电导率和热电性能. 这一进步为高性能二维电子材料提供了新的战略.

关键词:
这就是MXene MXene.电化学调节 电化学调节氧气空缺的地方.热电能采集采集热电能

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相关概念视频

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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