展示了与双极-CMOS-DMOS过程兼容的集成准垂直DMOS,实现了超低R_ON,sp的示范

展示了与双极-CMOS-DMOS过程兼容的集成准垂直DMOS,实现了超低R_ON,sp的示范

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Updated: Jul 24, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Feng Lin^1,2, Tuanzhuang Wu¹, Weidong Wang¹

¹National ASIC System Engineering Research Center, School of Integrated Circuits, Southeast University, Nanjing 210096, China.

Nanomaterials (Basel, Switzerland)

|February 13, 2025

概括

一种新型的分裂沟准垂直双扩散MOSFET (SGT-QVDMOS) 显著降低了传统极限以下的特定ON状态电阻 (R_ON,sp). 这种先进的设备结构增强了向前导电和承受电压的能力.

科学领域:

半导体设备物理学半导体设备物理
动力电子产品的动力电子.
材料科学是一种材料科学.

背景情况:

传统的双扩散MOSFET (DMOS) 在降低ON状态电阻 (R_ON,sp) 的限制,同时保持高断电压 (BV).
现有结构正在努力克服R_ON,sp的理论极限.

研究的目的:

提出和制造一个集成的半垂直双扩散 MOSFET (SGT-QVDMOS) 与一个分门沟 (SGT) 结构.
为了证明特定的ON状态电阻 (R_ON,sp) 在超出常规极限的显著降低.
为了呈现已制造的SGT-QVDMOS设备的测量数据.

主要方法:

在门沟内引入垂直门聚合物,分割接地源聚合物和不对称的厚氧化物.
传统的横向漂移区域折叠成一个准垂直结构.
使用180nm双极-CMOS-DMOS (BCD) 工艺进行制造.

主要成果:

在SGT-QVDMOS表现出一个二维电压承受模式 (水平和垂直).
与传统的极限相比,实现了11.07mΩ·mm2的超低R_ON,sp,减少了39.0%.
测量设备参数包括1.9V的门电压 (V_TH) 和48.6V的故障电压 (BV).

结论:

通过电场调制和减少侧面面积,SGT-QVDMOS有效地改善了前向导电特性.
这种新的结构成功地打破了特定的ON状态电阻的传统极限.
制造出来的设备在功率电子应用中表现出卓越的性能.

关键词:

在BCD过程中,BCD的过程是:在DMOS中,使用DMOS.在SGT中,SGT是SGT.几乎垂直的结构,几乎垂直的结构.特定的ON状态电阻电阻

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