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关于DPPT-TT聚合物场效应晶体管的电气性能的实验调查,其中包括楼梯门介电器

Hong Zhu¹, Yi Qian¹, Yu Yan¹

¹College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.

|February 13, 2025

概括

研究人员开发了高压p型聚合物场效应晶体管 (PFET),使用一种新的楼梯门介电 (SGD) 结构. 这大大提高了故障电压从19V到80V,增强了动力装置的功能.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

P型聚合物场效应晶体管 (PFET) 提供了环境兼容性和灵活性,由于介电漏洞,限制了它们在高压应用中的使用.
在p型动力装置和集成电路方面的进步受到传统PFET中介电分解限制的阻碍.

研究的目的:

为高压PFET引入一种新的楼梯门介电结构 (SGD).
为了显著提高p型聚合物场效应晶体管的分解电压.
调查SGD结构对设备性能和操作机制的影响.

主要方法:

制造p型聚合物DPPT-TT高压PFET,在源侧和排水侧采用楼梯门介电结构 (SGD).
电气特性测量故障电压和状态电阻.
进行 TCAD (技术计算机辅助设计) 模拟,以展示 SGD PFET 的操作机制.

主要成果:

随着SGD结构,PFET的故障电压从19V显著增加到80V.
该SGD结构有效地减少了源和排水之间的电场,减轻了故障.
尽管步门长度为50微米,但与传统设备相比,启动电阻仅增加了20%.

结论:

新型楼梯门介电 (SGD) 结构是开发高压p型聚合物场效应晶体管的可行方法.
SGD设计为推进p型电源设备和电源集成电路提供了一个有前途的途径.
在不显著增加现状电阻的情况下实现的增强故障电压突显了拟议结构的有效性.

关键词:

金融基金ETF的使用情况断裂电压的故障电压是什么动力设备的功率设备.楼梯介电器电阻介电器

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