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Updated: May 28, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

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离散铁电极化切换在纳米级氧化物通道铁电场效应晶体管中的切换

Yanjie Shao1, Elham Rafie Borujeny1, Jorge Navarro Fidalgo1

  • 1Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

Nano letters
|February 13, 2025
PubMed
概括

本研究探讨了氧化物 (HZO) 晶体管中的铁电 (FE) 切换. 缩放通道厚度增强了内存窗口 (MW),揭示了FE域固定影响性能.

关键词:
铁电场效应晶体管是铁电场效应晶体管.铁电领域是铁电领域.铁电疲劳是什么意思氧化氧化 (HZO) 的使用印度锡氧化物 (ITO)记忆窗口是一个记忆窗口.不易挥发的记忆力 不易挥发的记忆力

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy10:40

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