相关实验视频

Updated: May 28, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.3K

二维Cr3Te4/WS2/Fe3GeTe2/WTe2磁性存储器,具有无电场切换和低功耗的磁性存储器

Kun He1,2, Bailing Li2,3, Jianhang Nie1

  • 1Hunan Provincial Key Laboratory of Two-Dimensional Materials, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.

Advanced materials (Deerfield Beach, Fla.)
|February 14, 2025
PubMed
概括

本研究介绍了一种新的方法,用于创建低功率旋转轨道扭矩 (SOT) 磁性存储器,使用2D范德瓦尔斯异构结构. 开发的磁道连接 (MTJs) 提供高耐用性和降低能耗的无电场切换.

关键词:
两维材料是二维材料.低功耗低功耗的电力使用.磁性记忆 - 磁性记忆是一种磁性记忆.磁道交叉点 磁道交叉点

更多相关视频

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K

相关概念视频

Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
674
Magnetic Field Due To A Thin Straight Wire01:28

Magnetic Field Due To A Thin Straight Wire

Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.
4.7K
Magnetic Field Due to Two Straight Wires01:18

Magnetic Field Due to Two Straight Wires

Consider two parallel straight wires carrying a current of 10 A and 20 A in the same direction and separated by a distance of 20 cm. Calculate the magnetic field at a point "P2", midway between the wires. Also, evaluate the magnetic field when the direction of the current is reversed in the second wire.
2.3K
Magnetic Field due to Moving Charges01:23

Magnetic Field due to Moving Charges

A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
8.3K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
264