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Updated: May 28, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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在偶分母填充1/6和1/8时开发分数量子霍尔状态

Chengyu Wang1, P T Madathil1, S K Singh1

  • 1Princeton University, Department of Electrical and Computer Engineering, Princeton, New Jersey 08544, USA.

Physical review letters
|February 14, 2025
PubMed
概括

奇特的量子相在二维电子系统中出现. 实验揭示了在偶分母1/6和1/8上发展的分数量子霍尔状态 (FQHS),这表明了具有潜在非阿贝尔式anyon激发的新物理学.

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