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Updated: May 28, 2025

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通过表轴单体立体3D集成,通过低功耗的2D门全方位逻辑实现3D集成

Junchuan Tang¹, Jianfeng Jiang², Xiaoyin Gao¹

¹Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.

Nature materials

|February 14, 2025

概括

研究人员开发了一个晶圆尺度的二维半导体通道全方位 (GAA) 晶体管. 这一创新使未来的电子设备能够实现超越的性能和能源效率提升.

科学领域:

材料科学与工程材料科学与工程
纳米技术纳米技术
半导体物理半导体物理

背景情况:

晶体管小型化对于提高设备性能,能源效率和集成密度至关重要.
二维 (2D) 半导体在安格斯特罗姆节点提供了门周围 (GAA) 场效应晶体管 (FET) 的潜力,为功率扩展提供了优越的门控制.
2D GAA异构结构与原子光滑接口的可扩展整合仍然是一个重大挑战.

研究的目的:

开发一个晶圆尺度,单立体3D集成的2D GAA异构结构.
为了实现2D半导体和高-κ介电体之间的原子光滑接口,以提高晶体管性能.
为了证明2D GAA FETs在超越电子领域的潜力.

主要方法:

低温单体三维整合. 低温单体三维整合.
高流动性二维半导体Bi₂O₂Se与高-κ层原生氧化物介电体Bi₂SeO₅的表轴集成.
制造尺寸缩放的2D GAA FET,其门长度为30 nm.

主要成果:

实现了晶圆尺度,多层堆叠,单晶的2D GAA配置,具有原子光滑的接口.
证明了280cm2V-1s-1的高电子流动性和62mV dec-1的近乎理想的下值摆动.
展示了超低的操作电压 (0.5V),高的状态电流 (>1 mA μm-1),超低的内在延迟 (1.9 ps) 和出色的能量延迟产物 (1.84 × 10-27 Js μm-1).

结论:

开发的晶圆尺度2D GAA系统提供了显著的性能和功率优势.
这种方法克服了高级晶体管架构中2D材料的关键集成挑战.
这项技术对未来超越的单立体3D集成电路具有很大的潜力.

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