在上的石墨烯场效应晶体管光探测器中介面摄影效应的表征和建模
Leslie Howe1, Kalani H Ellepola1, Nusrat Jahan1
1Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech, Blacksburg, Virginia 24061, United States.
概括
在上的石墨烯场效应晶体管使得在的带隙之外能够进行红外光检测. 这些新的光检测器实现了高增益和灵敏度,克服了用于红外应用的电子的局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 电子工程 电子工程
- 光电学是指光电子产品.
背景情况:
- 的带隙限制了超出1100nm的红外光检测.
- 是现代电子产品的基石,推动了对扩展光谱能力的需求.
研究的目的:
- 为了展示石墨烯场效应晶体管光探测器在上用于红外探测.
- 为了研究这些设备中高光导增益背后的机制.
主要方法:
- 在基板上制造石墨烯场效应晶体管.
- 在各种波长,包括红外波段的光电探测器性能的表征.
- 开发一个理论模型来解释光导增益机制.
主要成果:
- 在的带隙上实现了高光响应性 (>10^6 A/W).
- 在1530nm处证明了红外探测,光响应度为35A/W.
- 观察到高光敏度归因于光效应和乌尔巴赫尾巴.
结论:
- 在上的石墨烯场效应晶体管有效地将光检测扩展到红外频谱.
- 拟议的模型准确地解释了光增益机制,由表面电荷调制驱动.
- 这些设备为使用平台的红外传感应用提供了有前途的解决方案.
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