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电化学随机访问记忆:进展,前景和机遇

A Alec Talin¹, Jordan Meyer², Jingxian Li³

¹Sandia National Laboratories, Livermore, California 94551, United States.

Chemical reviews

|February 17, 2025

概括

电化学随机访问存储器 (ECRAM) 通过启用模拟突触和神经元功能,为高效的神经形态计算提供了一个有希望的途径. 本综述探讨了ECRAM的使用情况.

科学领域:

材料科学与工程材料科学与工程
神经科学和神经形态计算的神经科学和神经形态计算
固态电子固态电子

背景情况:

对高效数据处理的需求推动了非·诺伊曼计算架构的发展.
神经形态系统需要类似的突触和神经元元素,但物质限制阻碍了进步.
固态电化学离子插入,或ECRAM,为创建合适的设备提供了一个可行的解决方案.

研究的目的:

审查ECRAM技术的基本概念,最近的进展和未来的前景.
突出ECRAM在实现神经形态应用中模拟突触和神经元特征方面的潜力.
讨论用于大型计算系统的ECRAM设备扩展的挑战和机遇.

主要方法:

通过固态电化学氧化还原反应,ECRAM通过电子导电量的门控制的批量调制来运行.
该技术利用类似于可充电电池的离子插入机制来调整材料特性.
这次审查将ECRAM根据其移动的离子电荷载体广泛分类:,质子和氧气空缺.

主要成果:

ECRAM设备显示出几乎理想的模拟突触特征,这对于神经形态计算至关重要.
电化学离子插入可以有效调整各种材料的电子特性,包括氧化物和二维材料.
导电性变化可以通过ECRAM跨度数量级来实现,从而实现多功能设备功能.

结论:

ECRAM是开发先进推理加速器和模拟尖端神经网络的关键技术.
在将ECRAM扩展到数百万个具有高可靠性和低功耗的纳米尺寸设备上仍然存在重大挑战.
对不同离子载体 (,质子,氧空缺) 的进一步研究对于优化ECRAM性能至关重要.

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