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Updated: May 27, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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在MoS2,MoSe2和MoTe2中作为独特物理化学的关键驱动因素的基空缺,用于选择性催化

Emilia Piosik1, Maciej J Szary2

  • 1Institute of Materials Research and Quantum Engineering, Poznan University of Technology, ul. Piotrowo 3, 61-138, Poznan, Poland.

Chemistry (Weinheim an der Bergstrasse, Germany)
|February 18, 2025
PubMed
概括

过渡金属二甲基化物 (TMD) 单层中的素空隙显著增强了催化活性,并创造了独特的材料特性. 这些缺陷解锁了电催化和光催化中的定制应用.

关键词:
两维材料是二维材料.缺陷 缺陷 缺陷 缺陷 缺陷功能化的功能化.相互作用的选择性.分子分子分子的分子.

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