基于氧化和的场效应晶体管用于超低压开关 (1μV),低子值摆动和内存的半导体铁电
S Vulpe1, M Dragoman1, M Aldrigo1
1National Institute for Research and Development in Microtechnologies (IMT), Str. Erou Iancu Nicolae 126A, Voluntari (Ilfov), Romania.
Nanotechnology
|February 18, 2025
概括
研究人员开发了一种新的氧化 (NiON) 场效应晶体管 (FET),具有超低压切换和非挥发性内存功能. 这一突破表明,在没有回火一年后,NiON设备具有稳定的铁电特性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术纳米技术
背景情况:
- 铁电材料对于非挥发性内存和低功耗电子产品至关重要.
- 开发稳定高效的铁电场效应晶体管 (FET) 仍然是一个关键的挑战.
- 用添加的氧化 (NiON) 是新型半导体应用的有希望的候选者.
研究的目的:
- 为了研究一种新的氧化 (NiON) 基场效应晶体管 (FET) 的性能.
- 为了评估NiON FET的铁电和内存特性.
- 评估开发的设备中铁电性能的长期稳定性.
主要方法:
- 使用添加氧化 (NiON) 半导体层制造FET设备.
- 在氧化物 (Al2O3) 缓冲层上的NiON生长,该缓冲层沉积在化 (Si) 晶圆上.
- 描述FET的电气性能,包括门电压切换和下值摆动 (SS).
- 评估设备作为铁电容性非易失性存储器的性能.
主要成果:
- 尼昂FET在1μV的网关电压下证明了超低电压切换.
- 实现了55mV/十年的低下值波动 (SS),这表明切换效率高.
- 同样的FET表现出铁电容性非挥发性内存特征.
- 经过一年的时间,这些性能在没有任何热或唤醒程序的情况下保持不变,证实了设备的稳定性.
结论:
- 氧化 (NiON) 是高性能铁电FET的可行半导体.
- 开发的NiON FET既提供超低压切换功能,也提供非挥发性内存功能.
- 在NiON设备中铁电的长期稳定性对于实际应用具有重要意义.
相关概念视频
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