高功率微波脉冲诱导的GaN高电子流动性晶体管功率放大器中的损伤效应
Jingtao Zhao1,2,3, Gang Zhao4,5,6, Quanyou Chen7
1Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, 621900, China. sduzjt@foxmail.com.
Scientific reports
|February 18, 2025
概括
高功率微波可以通过新的雪崩破坏和刺激燃烧效应破坏化 (GaN) 高电子流动性晶体管 (HEMT). 这一发现对于确保GaN HEMT在苛刻应用中的可靠性至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 化 (GaN) 高电子流动性晶体管 (HEMT) 对高功率射频放大器至关重要.
- 增加的电磁复杂性和功率密度对GaN HEMT造成了重大可靠性挑战.
- 在高功率微波 (HPM) 暴露下,GaN设备的现有损坏机制尚未完全理解.
研究的目的:
- 研究高功率微波暴露对AlGaN/GaN HEMT功率放大器的影响和潜在的机制.
- 为了识别和描述一个新的故障现象,与之前报告的GaN设备中的HPM损伤机制不同.
主要方法:
- 对受到高功率微波辐射的AlGaN/GaN HEMT功率放大器进行实验研究.
- 详细分析一种新观察到的效应现象,表现出强烈的场效应特征.
- 数字模拟以阐明在HPM压力下设备故障机制.
主要成果:
- 在AlGaN/GaN HEMT中发现了一种新的HPM诱导失效机制,与已知的损伤途径不同.
- 该机制涉及HPM与排水电极的合,产生高电场.
- 这导致大门和排水道附近的雪崩崩,形成一个泄漏通道,随后刺激燃烧.
结论:
- 该研究揭示了HPM下GaN HEMT的新失败模式,其特点是雪崩崩和刺激倦怠.
- 这种机制是由HPM与排水电极的合引发的场效应现象驱动的.
- 了解这种新的故障机制对于提高高功率射频应用中GaN HEMT的可靠性和操作安全性至关重要.
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