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Updated: May 27, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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1D- ((GaN/AlN)/2D-Gr/3D- ((SiO2/Si) 组合高性能闪存存储器设备

Zhonghong Guo1, Jianbo Shang1, Hangtian Li1

  • 1Guangdong Engineering Research Centre of Optoelectronic Functional Materials and Devices, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, China.

ACS applied materials & interfaces
|February 19, 2025
PubMed
概括

这项研究引入了一种新的非挥发性记忆装置,它结合了1D GaN/AlN微线和2D石墨烯. 这种混合维度材料为先进的电子应用提供了快速切换速度和长期稳定性.

关键词:
在 GaN GaN 中.漂浮门是漂浮的门.石墨烯是一种石墨烯.混合维度异构连接的异构连接.记忆 记忆 记忆 记忆 记忆微电线是微电线的

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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