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基于有序阵列的催化Si纳米线通道的高性能门全方位场效应晶体管

Wei Liao¹, Wentao Qian¹, Junyang An¹

¹School of Electronic Science & Engineering, Nanjing University, Nanjing, 210093, People's Republic of China.

Nano-micro letters

|February 19, 2025

概括

这项研究引入了一种使用催化纳米线 (SiNW) 通道制造门式全方位场效应晶体管 (GAA-FET) 的新方法. 这种新的方法实现了高性能,与未来3D集成电路的先进光刻技术竞争.

科学领域:

纳米技术和材料科学材料科学
半导体设备物理半导体设备物理

背景情况:

网关全方位场效应晶体管 (GAA-FET) 对于高性能电子产品至关重要.
将催化纳米线 (SiNW) 通道集成到GAA-FET中具有挑战性,原因是定位和对齐问题.
现有的SiNW制造方法缺乏适用于高级GAA-FET架构的可扩展性和精度.

研究的目的:

开发一种可扩展的制造方法,用于高性能GAA-FET,利用催化SiNW通道.
为了克服SiNW阵列制造中精确定位和对齐的局限性.
为了证明SiNWs作为先进FET架构的可行的1D通道的潜力.

主要方法:

使用飞机内固体-液体-固体 (IPSLS) 增长,批量制造订制超薄SiNW阵列.
开发一种现场通道释放技术,以保持SiNW阵列完整性.
在SiNW通道上优化源/排水接触以成功制造GAA-FET设备.

主要成果:

首次使用催化SiNW通道成功制造了GAA-FET.
实现了10^7的高开/关电流比,以及66mV dec^-1的的下值摆动.
缩小了用EBL和EUV光刻制成的催化SiNW-FET和最先进的GAA-FET之间的性能差距.

结论:

催化IPSLS SiNW适用于高性能GAA-FET的可扩展制造.
开发的技术可以为GAA架构准确地定位和对齐SiNW.
这些发现为使用基于SiNW的GAA-FETs的单立体3D集成铺平了道路.

关键词:

门周围全方位场效应晶体管 (GAA-FETs)在平面内固体-液体-固体.超薄的纳米线超薄的纳米线

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