宽带间隔氧化物半导体作为高效n-i-p Sb2Se3太阳能电池的反接触修饰器
Dingzheng Wang1, Zhi Lin2, Anwen Gong1
1State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China.
氧化物层通过改善电荷传输和减少缺陷来增强胺太阳能电池. 这种新的方法提高了高性能设备的功率转换效率,达到9.67%.
科学领域:
- 材料科学 材料科学 材料科学
- 太阳能光伏发电是如何实现的
- 半导体物理 半导体物理
背景情况:
- 宽带间隙,p型半导体层对于化 (Sb2Se3) 太阳能电池至关重要,增强载体封闭并最大限度地减少接口重组.
- 有效的反接触修改对于提高Sb2Se3太阳能电池性能至关重要.
研究的目的:
- 为了研究 (Te) 薄层的应用,在现场氧化成氧化物 (TeO2),作为基层Sb2Se3太阳能电池中的反接触修饰.
- 评估Te和TeO2层对设备性能的影响,包括内置潜力,耗尽宽度,重组和孔运输.
- 探索TeO2在Sb2Se3吸收器中的空缺 (VSe) 的缺陷被动化能力.
主要方法:
- 制造超层Sb2Se3太阳能电池,其中包含一个薄层 (Te).
- 在 Te 层的现场氧化形成氧化 (TeO2).
- 描述Te和TeO2层及其与Sb2Se3的接口的电和光学特性.
- 太阳能电池的性能评估,包括开放电路电压和功率转换效率.
主要成果:
- 两种Te和TeO2层都改善了Sb2Se3太阳能电池的内置潜力和耗尽宽度.
- 在后面接口的非辐射重组因Te和TeO2层的存在而减少.
- TeO2层有助于更好的孔运输,由于有利的带对齐与Sb2Se3.
- 在Sb2吸收器中的TeO2有效地被动化空缺 (VSe)
- 使用TeO2的Sb2Se3太阳能电池实现了0.463V的高开通电压和9.67%的冠军功率转换效率.
结论:
- 在现场形成的TeO2层可以作为高性能Sb2Se3太阳能电池的有效反接触修饰.
- 氧化物对空缺的被动化和改进的接口特性大大提高了设备的性能.
- 这一战略为推进真空涂层Sb2Se3太阳能电池技术提供了一个有希望的途径.
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