原子 Sn 嵌入式亚纳米孔丰富的硬碳宿主,用于高度可逆的准金属 Li 存储
Tong Jin1, Xin Yu Zhang1, Shuai Yuan2
1State Key Lab of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, P. R. China.
Science advances
|February 21, 2025
概括
研究人员开发了具有单个锡原子 (Sn/CS@SC) 的新型碳球来改进金属阳极. 这种材料增强了的储存,减少了副作用,并提高了电池的性能,以提供更持久,更有效的能量储存.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术 纳米技术
背景情况:
- 金属阳极面临着诸如低库伦比效率,树突增长和由于不可逆转的副作用导致的体积变化等挑战.
- 这些问题阻碍了高能量密度金属电池的实际应用.
研究的目的:
- 开发一种用于金属阳极的新型宿主材料,可以减轻副作用并提高循环稳定性.
- 为了研究以单个Sn原子 (Sn/CS@SC) 封装的富含亚纳米孔的碳球体作为宿主的性能.
主要方法:
- 用单个Sn原子封装的富含亚纳米孔的碳球的合成 (Sn/CS@SC).
- 作为宿主,对Sn/CS@SC进行电化学测试,包括库伦比效率和循环稳定性测量.
- 使用Sn/CS@SC阳极和LiNi0.8Co0.1Mn0.1O2阴极制造和测试一个完整的电池电池.
主要成果:
- Sn/CS@SC 在内部空洞空间内促进了准金属储存,抑制了外表面的直接涂层.
- 亚纳米孔提供了空间限制,减少了电解质副作用,并在600个循环中提高了库伦比克效率,达到99.8%.
- 一个完整的电池在高电流密度下表现出高容量保留 (在500个周期中约80%).
结论:
- Sn/CS@SC有效地解决了与金属阳极相关的关键挑战.
- 开发的材料为高性能和稳定的金属电池提供了有前途的解决方案.
更多相关视频
10:58Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing
Published on: March 7, 2018
10.1K
07:55Elemental-sensitive Detection of the Chemistry in Batteries through Soft X-ray Absorption Spectroscopy and Resonant Inelastic X-ray Scattering
Published on: April 17, 2018
12.6K
相关概念视频
Ionic Bonding and Electron Transfer
46.6K
Ions are atoms or molecules bearing an electrical charge. A cation (a positive ion) forms when a neutral atom loses one or more electrons from its valence shell, and an anion (a negative ion) forms when a neutral atom gains one or more electrons in its valence shell. Compounds composed of ions are called ionic compounds (or salts), and their constituent ions are held together by ionic bonds: electrostatic forces of attraction between oppositely charged cations and anions.
46.6K
Bonding in Metals
45.5K
Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”.
45.5K
Metallic Solids
16.4K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and...
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and...
16.4K
Network Covalent Solids
12.9K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
12.9K
Valence Bond Theory
8.9K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
8.9K
MOS Capacitor
1.8K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
