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Updated: May 7, 2026

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光成像诱导的兴奋剂和高性能单层WSe2P型晶体管的接口调制

Yu-Tung Lin1, Yu-Wei Hsu2, Zih-Yun Fong1

  • 1Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan.

Nano letters
|February 21, 2025
PubMed
概括

研究人员使用p-doping层减轻了二维过渡金属二甲基化物中的费米级固定. 这提高了WSe2 p-FET中的孔载体度和接触电阻,使高性能2D晶体管成为可能.

关键词:
减少接触电阻,减少接触电阻场效应晶体管电晶体管.界面分析 界面分析接口调制接口调制光辐射光谱学 (photoemission spectroscopy) 是一种使用光辐射光谱的方法.tungsten diselenide 的使用情况两个维的材料是二维材料.两个步骤的石版印刷.

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...