近场太赫兹时域光谱用于内线电测量,用于半导体集成过程的内存
Sunhong Jun1,2, Inkeun Baek1, Suhwan Park1
1Advanced Process Development Team 4, Semiconductor R&D Center, Samsung Electronics Co. Ltd., 1-1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Republic of Korea.
Communications engineering
|February 22, 2025
概括
一种新的非破坏性太赫兹 (THz) 计量技术精确测量半导体的电气性能. 这种在线太赫兹时域光谱 (TDS) 方法确保金属氧化物半导体场效应晶体管的可靠性和性能.
科学领域:
- 半导体设备物理学 半导体设备物理
- 材料科学是一种材料科学.
- 计量学 计量学 计量学
背景情况:
- 电气性能监测对于半导体设备的可靠性至关重要.
- 金属氧化物半导体场效应晶体管 (MOSFET) 的缺陷影响性能.
- 现有的方法往往具有破坏性,缺乏在线功能.
研究的目的:
- 开发一种非破坏性的直线计量技术,用于在半导体集成过程中监测电气性能.
- 为了实现10微米以下的分辨率,在芯片上进行微型模式分析.
- 为了使半导体制造过程中的过程纠正能够立即反.
主要方法:
- 使用太赫兹 (THz) 时域光谱 (TDS) 与近场微探测器相结合.
- 将THz-TDS系统集成到内存生产线中,用于实时测量.
- 开发了一种TDS信号校正方法,以减轻来自不需要层的干扰.
主要成果:
- 实现了10微米以下的分辨率,用于测量芯片上的微型图案.
- 与传统的破坏性方法 (例如,四点探头) 显示一致的结果.
- 使用THz传输成功检测到界面变化 (浸透),与二次离子质谱 (SIMS) 数据相关联.
结论:
- 在线近场THz TDS是一种可行的非破坏性技术,用于监测半导体的电气性能.
- 这种方法允许在加工后立即预测电气性能.
- 能够快速纠正生产条件,提高制造效率和设备可靠性.
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