:HfO:

Taegyu Kwon1, Hyeong Seok Choi1, Dong Hyun Lee1

  • 1Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea. minhyuk.park@snu.ac.kr.

Chemical communications (Cambridge, England)
|February 24, 2025
PubMed
概括

此更正纠正了前一篇关于基于氧化 (HfO2) 的铁电突触器件的文章中的错误. 它提供了关于这些先进电子元件的挑战和工程解决方案的最新信息.

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