Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

264
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
264
Line Protection with Impedance Relays01:27

Line Protection with Impedance Relays

64
Coordinating time-delay overcurrent relays in complex radial systems and directional overcurrent relays in multi-source transmission loops can be challenging. Impedance relays address these issues by responding to the voltage-to-current ratio, specifically measuring the apparent impedance of a line. These relays become more sensitive during faults as current increases and voltage decreases, thereby reducing the apparent impedance.
Under normal conditions, low load currents keep the measured...
64
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

281
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
281
Characteristics of MOSFET01:17

Characteristics of MOSFET

324
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
324
Masking and Demasking Agents01:19

Masking and Demasking Agents

2.3K
EDTA titrations may necessitate masking and demasking agents to temporarily protect a particular metal ion in a mixture from the EDTA reaction. These agents facilitate the sequential analysis of the metal ions by forming stable complexes with some—but not all—metal ions during certain steps.
There are many masking agents, such as cyanide, fluoride, triethanolamine, thiourea, and 2,3-bis(sulfanyl)propan-1-ol (formerly 2,3-dimercapto-1-propanol), with the masking agent chosen based on...
2.3K
Switching of BJT01:22

Switching of BJT

359
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
359

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

The association between ejaculatory dysfunction and lumbosacral disorders: a systematic review of an underrecognized clinical link.

Sexual medicine reviews·2026
Same author

Piezocatalytic nanotransducers rewire tumor immunometabolism via in situ peroxynitrite generation.

Biomaterials·2026
Same author

High encoding-sensitivity vision sensor with complementary nonlinear neuromorphic computing.

Nature communications·2026
Same author

Volatile self-selective memristive neuron for millisecond-latency neuromorphic object detection at the edge.

Nature communications·2026
Same author

Genetic dissection of cadmium accumulation in tea plants under nonphytotoxic field conditions.

Journal of genetics and genomics = Yi chuan xue bao·2026
Same author

Development of double emulsions loaded with Malus baccata (Linn.) polyphenols and their protective effect on dextran sulfate sodium-induced ulcerative colitis in mice.

Food chemistry·2026

相关实验视频

Updated: May 26, 2025

Large Scale Energy Efficient Sensor Network Routing Using a Quantum Processor Unit
05:30

Large Scale Energy Efficient Sensor Network Routing Using a Quantum Processor Unit

Published on: September 8, 2023

475

通过基于值切换的统一安全原始体来提高物联网安全性.

Guobin Zhang1,2,3, Jianhao Kan3,4, Xuemeng Fan1,2,3

  • 1School of Integrated Circuits, Zhejiang University, Hangzhou 310027, People's Republic of China.

Nanotechnology
|February 24, 2025
PubMed
概括
此摘要是机器生成的。

研究人员使用值交换记忆器开发了集成的安全物联网硬件,结合了物理不可克隆功能 (PUF) 和真随机数发生器 (TRNG) 功能. 这一创新增强了物联网安全性,提高了能源效率和性能.

关键词:
这就是为什么物联网是物联网物联网.在PUF的基础上,PUF是在 TRNG TRNG 中,门切换的切换门统一的硬件统一的硬件

更多相关视频

Integration of 5G Experimentation Infrastructures into a Multi-Site NFV Ecosystem
10:15

Integration of 5G Experimentation Infrastructures into a Multi-Site NFV Ecosystem

Published on: February 3, 2021

3.7K
Design to Implementation Study for Development and Patient Validation of Paper-Based Toehold Switch Diagnostics
10:42

Design to Implementation Study for Development and Patient Validation of Paper-Based Toehold Switch Diagnostics

Published on: June 17, 2022

2.8K

相关实验视频

Last Updated: May 26, 2025

Large Scale Energy Efficient Sensor Network Routing Using a Quantum Processor Unit
05:30

Large Scale Energy Efficient Sensor Network Routing Using a Quantum Processor Unit

Published on: September 8, 2023

475
Integration of 5G Experimentation Infrastructures into a Multi-Site NFV Ecosystem
10:15

Integration of 5G Experimentation Infrastructures into a Multi-Site NFV Ecosystem

Published on: February 3, 2021

3.7K
Design to Implementation Study for Development and Patient Validation of Paper-Based Toehold Switch Diagnostics
10:42

Design to Implementation Study for Development and Patient Validation of Paper-Based Toehold Switch Diagnostics

Published on: June 17, 2022

2.8K

科学领域:

  • 材料科学 材料科学 材料科学
  • 电气工程 电气工程
  • 计算机科学 计算机科学

背景情况:

  • 大数据和物联网 (IoT) 的扩散需要先进的安全硬件解决方案.
  • 当前的物联网生态系统在高效集成强大的安全功能方面面临着挑战.
  • 硬件安全对于保护庞大的网络和敏感数据至关重要.

研究的目的:

  • 开发一个统一的安全硬件模块,集成物理不可克隆功能 (PUF) 和真随机数发生器 (TRNG) 功能.
  • 为了利用值切换 (TS) 记忆器技术来创建新的高性能安全硬件.
  • 解决物联网安全硬件中的集成和能源效率挑战.

主要方法:

  • 使用基于FeO薄膜的值切换 (TS) 记忆元细胞制造32x32 1T1R阵列.
  • 描述TS记忆器设备的化学和电气性能.
  • 使用CTR_DRBG算法实现PUF系统和TRNG.
  • 通过汉明距离分析,测试和NIST-900统计测试进行性能评估.

主要成果:

  • 该TS记忆器显示出良好的周期稳定性和随机性.
  • 在经过长时间的高温测试后,PUF系统实现了出色的统一性,独特性和稳定性,位误差率低 (<1.5%).
  • TRNG通过了国家标准与技术研究所的900次测试,表明高质量的随机数生成.
  • 与现有解决方案相比,在能源消耗 (>30%的减少) 和随机数生成率 (>20%的增加) 中观察到显著改善.

结论:

  • 开发的统一安全硬件有效地集成了使用TS记忆器技术的PUF和TRNG功能.
  • 这项研究验证了TS记忆器在物联网中的高级硬件安全应用中的潜力.
  • 这项工作提供了创新的解决方案,以提高物联网设备中的安全硬件的集成和能源效率.