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在Si3N4波导平台上进行高效的热光开关的理论分析,使用基于SiOC的等离子光子学
Dimitris V Bellas1,2,3, Eleftheria Lampadariou1,2,3, George Dabos1,2
1Department of Informatics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece.
Nanomaterials (Basel, Switzerland)
|February 25, 2025
概括
优化的化热光学相变换器实现了光子集成电路的高效率. 带环共振器设计的非对称MZI提供低功耗和最小损耗,使可扩展,节能光子应用成为可能.
科学领域:
- 光子学和材料科学 材料科学
- 集成光学和光子学集成光学和光子学.
- 纳米光子学和等离子学
背景情况:
- 光子集成电路 (PIC) 对电信,量子计算和生物医学应用至关重要.
- 化 (SiN) 平台为PIC提供透明度,低光学损失和热稳定性.
- 在SiN上高效的热光学 (TO) 调制受到重新配置限制和高功率需求的阻碍.
研究的目的:
- 在SiN平台上优化TO相变器,以提高功率效率,减少足迹和最小化插入损失.
- 为了开发一个CMOS兼容的等离子光子TO相位变换器.
- 为了评估不同的干扰仪架构,以获得卓越的性能.
主要方法:
- 采用光热模拟来评估四种干扰仪架构:对称和不对称的马赫-泽恩德干扰仪 (MZIs),带环共振器的MZI和单臂设计.
- 引入了一个使用高TO系数的SiOC材料层和SiN平台上的加热器的等离子光子TO相位变换器.
- 评估了性能指标,包括功耗,插入损失,足迹和切换速度.
主要成果:
- 具有环共振器 (A-MZI-RR) 架构的不对称MZI表现出最佳性能.
- A-MZI-RR显示了最小的功耗 (1.6mW) 和低插入损失 (2.8dB).
- 优化的设备实现了缩短14.4μm的长度,呈现出一个有利的优点数字.
结论:
- 优化的基于SiN的TO开关提供了更高的效率和紧性.
- 开发的等离子光子TO相变器支持可扩展和节能的PIC.
- 这些进步对于要求降低功率和尺寸的高性能光子应用至关重要.
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