基于FeFET的内存计算单元电路及其应用
1Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China.
Nanomaterials (Basel, Switzerland)
|February 25, 2025
概括
新兴的非易失性内存 (NVM) 使用HfO2合的铁电场效应晶体管 (FeFET) 为内存计算 (CiM) 数字电路提供了解决方案. 本研究介绍了一种基于FeFET的新型单元电路,它统一逻辑输入,实现高效的逻辑操作和完整的加法器,用于高级CiM应用程序.
科学领域:
- 半导体设备 半导体设备
- 新兴的记忆技术
- 数字电路设计数字电路设计
背景情况:
- 互补金属氧化物半导体 (CMOS) 技术面临越来越多的挑战.
- 新兴的非易失性内存 (NVM) 和内存计算 (CiM) 架构对于数据密集型计算至关重要.
- 用HfO2合的铁电场效应晶体管 (FeFET) 是CiM中使用的一种NVM,但输入形式限制阻碍了逻辑级联.
研究的目的:
- 为基于FeFET的逻辑函数提出一个新的Vin-Vout CiM单元电路.
- 为了克服FeFET中各种输入形式的局限性,用于CiM数字电路.
- 为了证明FeFETs在CiM逻辑操作中的可行性和可扩展性.
主要方法:
- 开发一个使用FeFET的内置状态的Vin-Vout CiM单元电路.
- 在基于FeFET的单元电路中统一逻辑输入形式.
- 使用拟议的单元电路设计基本逻辑门和完整增量器 (FA).
主要成果:
- 拟议的单元电路成功地统一了FeFETs的逻辑输入形式.
- 已经证明FeFET是逻辑操作的核心组件.
- 模拟结果验证了基于FeFET的单元电路对CiM应用的可行性和可扩展性.
结论:
- 拟议的Vin-Vout CiM单元电路有效地弥合了FeFETs的逻辑输入形式.
- 在开发更高效的CIM电路方面,FeFET具有显著的潜力.
- 基于FeFET的单元电路设计是可扩展的,适用于复杂的逻辑函数.
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