通过混合开关方法提高1选择器-1 ReRAM交叉阵列的可靠性
1Department of Artificial Intelligence Convergence, Sahmyook University, Seoul 01795, Republic of Korea.
Materials (Basel, Switzerland)
|February 26, 2025
概括
本研究介绍了1Selector-1 ReRAM (1S1R) 设备的新型切换方法,提高了4K横杆阵列的可靠性. 该方法使用直流扫描和交流脉冲重置来防止设备故障,为先进的内存技术铺平道路.
科学领域:
- 材料科学与工程 材料科学与工程
- 电气工程 电气工程
- 固态电子 固态电子
背景情况:
- 1选择器-1 ReRAM (1S1R) 设备对于高密度内存应用至关重要.
- 确保跨条阵列 (CBA) 中的1S1R设备的可靠性和耐用性是一个重大挑战.
- 现有的切换方法可能会导致设备的压力和故障,从而限制性能.
研究的目的:
- 开发一种创新的切换方法,以提高4K CBA中集成的1S1R设备的可靠性.
- 为了最大限度地降低设备压力,并防止在设置和重置操作期间发生故障.
- 评估拟议的切换策略对未来内存应用的性能和潜力.
主要方法:
- 在1S1R设备中,用于设置操作的DC扫描和用于重置操作的AC单脉冲重置.
- 在选择器组件中使用了GeSeTe电磁值切换 (OTS) 元素.
- 使用Pt/LiNbOx/W结构构建了ReRAM组件.
- 将选择器和ReRAM集成到4K交叉阵列 (CBA) 中进行测试.
主要成果:
- GeSeTe OTS 选择器表现出极好的耐力 (>1012周期),快速切换 (<100 ns) 和高均性 (<5%的变化).
- Pt/LiNbOx/W ReRAM展示了强大的双极电阻切换,多位能力和超过10~12个周期的耐用性.
- 集成的1S1R CBA显示可靠的数据保留和低的操作变化.
结论:
- 这种新的交换方法显著提高了1S1R设备在4K CBA中的可靠性.
- 选择器和ReRAM组件的演示性能突显了它们适用于先进的内存系统的适用性.
- 这项工作为实现高性能,高密度非挥发性内存应用提供了有希望的途径.
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