在微芯片中发现的热变化对双材料接口 (聚胺-EMC,聚胺-SiO和-EMC) 疲劳和断裂的影响
Pedro F C Videira1, Renato A Ferreira1, Payam Maleki2
1Department of Mechanical Engineering, Faculty of Engineering (FEUP), University of Porto, Dr. Roberto Frias Street, 4200-465 Porto, Portugal.
Polymers
|February 26, 2025
概括
温度显著影响半导体包装接口的断裂行为. 了解这些热效应对于提高集成电路设备的可靠性和设计至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 机械工程 机械工程
- 半导体物理 半导体物理
背景情况:
- 集成电路 (IC) 设备面临因材料差异和热力学应力而增加的接口复杂性.
- 集成电路中的双材料接口是脆弱的点,容易受到来自属性不匹配的应力度的影响 (Young的模量,CTE,hygro-swelling).
研究的目的:
- 研究热变化对半导体包装中关键双材料接口的断裂行为的影响.
- 分析温度对环氧成型化合物- (EMC-Si),氧化-聚胺 (SiO2-PI) 和PI-EMC接口的机械可靠性的影响.
主要方法:
- 使用双悬臂束 (DCB) 测试来评估模式I断裂性.
- 在三个温度下测试了三个双材料接口 (EMC-Si,SiO2-PI,PI-EMC):-20°C,23°C和100°C.
- 进行了准静态和循环负荷分析,以捕捉全面的热效应.
主要成果:
- 温度显著改变了故障机制;SiO2-PI随着温度的增加,从转移到接口故障.
- EMC-Si接口的断裂能量高度依赖温度,从0.136 N/mm增加到0.38 N/mm.
- 在高温下,SiO2-PI的裂变能量比EMC-Si低42%,而PI-EMC的裂变增长率是EMC-Si.的两倍.
结论:
- 热变化严重影响半导体包装中的双材料接口的断裂行为和可靠性.
- 调查结果为改进设计和确保先进IC设备的长期性能提供了必要的数据.
- 了解温度依赖的断裂机制是缓解高度集成电子系统故障的关键.
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