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在平面大厅磁阻传感器中对驱动模式和NiFe层厚度的系统分析

Changyeop Jeon¹, Mijin Kim¹, Jinwoo Kim¹

¹Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.

Sensors (Basel, Switzerland)

|February 26, 2025

概括

优化平面大厅磁阻 (PHMR) 传感器需要了解NiFe厚度和驱动模式. 使用25纳米NiFe层的恒压模式为敏感传感器应用提供最佳性能.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
电气工程电气工程

背景情况:

平面大厅磁阻 (PHMR) 传感器的价值是灵敏度和成本效益.
驾驶模式和铁磁层厚度会影响性能,但组合效应尚未得到充分探索.

研究的目的:

系统地调查Ni80Fe20厚度 (5-35nm) 对PHMR传感器性能的影响.
在恒流 (CC) 和恒电压 (CV) 驾驶模式下分析效应.
优化峰值到峰值电压 (Vp-p) 以提高传感器性能.

主要方法:

制造具有不同Ni80Fe20层厚度 (5-35nm) 的PHMR传感器.
在CC和CV驾驶模式下测试传感器性能.
在Ni80Fe20厚度和驾驶模式方面分析Vp-p变化.

主要成果:

在CC模式下,Vp-p最初因表面散射 (5-10nm) 而上升,然后随着厚度的增加而下降.
CV模式将阻力效应降到最低,信号主要由磁化依赖电阻驱动.
在CV模式下在25nm时达到最佳Vp-p;此外,由于电压分布,阻力降低会影响性能.

结论:

驾驶模式和NiFe厚度极大地影响PHMR传感器的性能.
建议使用最佳NiFe厚度 (25nm) 的CV模式来最大限度地提高Vp-p.
这些发现为开发具有更好的信号稳定性和灵敏度的高性能PHMR传感器提供了实际指导.

关键词:

恒定电流模式恒定电流模式恒定电压模式恒定电压模式驾驶模式驾驶模式磁阻传感器是一种磁阻传感器.

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