在2D铁电中空缺缺陷在2Se3和通过极化-缺陷合的导电性调制
Ming-Yu Ma1, Dan Wang2, Yu-Ting Huang1
1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
在二维 (2D) 化 (In2Se3) 中存在的缺陷导致其导电性,并稳定其铁电相. 这种理解使得用于纳米级应用的缺陷工程电子设备成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 二维 (2D) α-In2Se3 具有铁电特性和内在的n型导电性.
- 这种导电性和缺陷对相位过渡的影响的起源尚未完全理解.
研究的目的:
- 研究单层α-In2Se3.3.中的缺陷形成和电离能.
- 阐明两极化和缺陷之间的关系.
- 探索铁电相变和设备应用中的缺陷作用.
主要方法:
- 使用WLZ方法计算空隙形成和电离能.
- 识别出缺陷绑定的带边状态.
- 提出了一个缺陷工程铁电场效应晶体管 (FEFET) 模型.
主要成果:
- 发现了一个强烈的偏振-缺陷合效应.
- 底层空隙诱导n型导电性与向上极化.
- 空隙使铁电相稳定,并减缓过渡到电相.
结论:
- 空位缺陷在2D α-In2Se3.3.的电子和铁电性质中起着至关重要的作用.
- 缺陷工程为设计基于In2Se3的新型电子设备提供了一条途径.
- 可以利用极化-缺陷合来控制FEFET中的电阻.
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