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Updated: Jun 19, 2026

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
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作为CaAgSb热电器中的"杀手缺陷"的Ag空缺

A K M Ashiquzzaman Shawon1, Ferdaushi Alam Bipasha2, Channyung Lee2

  • 1Department of Chemical Engineering and Material Science, Michigan State University, East Lansing, Michigan 48824, United States.

ACS applied energy materials
|February 28, 2025
PubMed
概括

在CaAgSb Zintl化合物中的白银空位通过引起高的p型载体度来限制热电性能. 这些"杀手缺陷"防止了n型兴奋剂,并阻碍了材料热电功率 (zT) 的优化.

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