热稳定的鲁接触器用于强大的p型晶体管
I K M Reaz Rahman1,2,3, Taehoon Kim1,2, Inha Kim1,2
1Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States.
Nano letters
|February 28, 2025
概括
接触器提高了 (Te) p通道晶体管的热稳定性,可达250°C. 二氧化封装进一步提高了设备的性能,并使低压操作成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体设备物理 半导体设备物理
- 纳米技术 纳米技术
背景情况:
- (Te) 为p通道晶体管提供了高孔流动性.
- 热稳定性限制阻碍了Te晶体管的实际应用,尽管它们的低热预算适用于后端线路 (BEOL) 集成.
研究的目的:
- 为了研究薄膜的热稳定性.
- 为稳定的p型Te晶体管确定合适的接触金属和封装策略.
主要方法:
- 可扩展的热蒸发用于薄膜生长.
- 研究接触金属的热稳定性 (,,).
- 使用转移长度方法测量接触电阻.
- 高-κ ZrO2封装用于设备制造和表征.
主要成果:
- 鲁被确定为Te晶体管的热稳定接触物,可承受高达250°C的温度.
- 与Ni和Pd相比,在Te中显示出明显较低的扩散性.
- 在Ru-Te接口上测量的接触电阻为1.25kΩ·μm.
- ZrO2封装抑制了Te升华,并作为一个门介电.
结论:
- 是热稳定的p型Te晶体管的有前途的接触材料.
- ZrO2封装增强了设备的稳定性,并使低压操作具有高开/关比 (10^5).
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