从三域RuO2中的无otropic旋转分裂效应产生的增强场状扭矩,用于节能旋转轨道扭矩磁随机访问记忆.
Thi Van Anh Nguyen1,2, Hiroshi Naganuma1,2,3,4, Thi Ngoc Huyen Vu5
1Center for Science and Innovation in Spintronics (Core Research Cluster), Tohoku University, Katahira 2-1-1, Aoba ku, Sendai, Miyagi, 980-0812, Japan.
Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|February 28, 2025
概括
在抗铁磁二氧化 (RuO2) 中,旋转轨道扭矩 (SOT) 是由一种异构旋转分裂效应产生的,这对于节能旋转器件至关重要. 这项研究证实了独立于Néel向量的外平面旋转电流生成,从而提高了SOT的性能.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 反铁磁材料为节能自旋电子设备提供了潜力.
- 反铁磁体中的旋转轨道扭矩 (SOT) 是高级内存应用的关键现象.
- 二氧化物 (RuO2) 呈现出与自旋电流产生相关的独特对称性.
研究的目的:
- 通过反铁磁RuO2.2中的异性热旋分裂效应来研究旋转电流的产生.
- 分析RuO2对称性在旋转轨道扭矩 (SOT) 中的作用.
- 评估RuO2对高能效SOT磁性随机访问存储器 (SOT-MRAM) 的潜力.
主要方法:
- 制造一种高质量的RuO2 (100) 表面膜,具有三域结构.
- 实验分析平面外自旋电流的产生.
- 测量和比较旋转轨道扭矩效率 (场式和Slonczewski式).
- 微磁模拟以评估切换电压降低.
主要成果:
- 已证实RuO2中的异平自旋电流产生是独立于Néel向量.
- 由于Neel向量的独立性,对两个直角电流观察到相同的SOT值.
- 旋转分裂效应诱导的SOT表现出类似于场状的扭矩效率,比类似于Slonczewski的扭矩效率高六倍.
- 微磁模拟表明,在亚纳秒状态下,关键开关电压减少了2.6倍.
结论:
- 在RuO2中,外平面旋转电流的Neel向量独立性促进了高效的SOT.
- 在RuO2中的高场状扭矩效率对于减少SOT设备的切换能量是有希望的.
- 这些发现推动了基于反铁磁的高能效SOT-MRAM的开发.
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