紧型CMOS兼容的1 × 2 MMI合器,基于一个混合丰富的化薄膜酸平板平台
Optics letters
|February 28, 2025
概括
这项研究展示了一个紧的,低损耗的多模干扰 (MMI) 合器在一个混合丰富的化-薄膜酸 (SRN-LNOI) 平台上. 该设备为高级光子集成电路提供CMOS兼容性.
科学领域:
- 光子学 是一个光子学.
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 多模干扰 (MMI) 合器是光子集成电路 (PIC) 中用于功率分割的必不可少的组件.
- 开发低损耗,紧,CMOS兼容的MMI合器对于下一代PIC至关重要.
- 集成不同材料系统的混合平台为光子设备性能提供了独特的优势.
研究的目的:
- 设计和演示一个紧的1x2MMI合器,使用一个混合丰富的化薄膜酸 (SRN-LNOI) 平台.
- 为优化MMI合器设计,为TE和TM模式提供低损耗和均的功率分割.
- 为了评估制造的SRN-LNOI MMI合器在过量损耗和传导度方面的性能.
主要方法:
- 在SRN-LNOI平台上设计和模拟1x2MMI合器.
- 优化合器几何形状,以实现高效的功率分割.
- 使用混合集成技术制造MMI合器.
- 制造设备的实验性表征,包括测量波长范围内的多余损耗和传导率.
主要成果:
- 模拟的多余损失为-0.16 dB (TE) 和-0.22 dB (TM) 在1550 nm.
- 测量过量的损失为 -0.36 dB (TE) 和 -0.89 dB (TM) 的制造设备.
- 在1520nm和1580nm之间,测量的传输值从-3.2dB到-3.77dB (TE) 和-3.55dB到-4.3dB (TM) 之间.
- 一个紧的CMOS兼容设备的演示.
结论:
- 混合SRN-LNOI平台使得高性能MMI合器的开发成为可能.
- 制造的MMI合器具有低损耗和紧的尺寸.
- 该设备是为高效的下一代光子设备和PIC提供一个有前途的平台.
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