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Updated: May 24, 2025

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屏障宽度对在InN/InGaN量子井中具有中等应变的拓绝缘体相的影响

S P Łepkowski1

  • 1Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142, Warsaw, Poland. slawek@unipress.waw.pl.

Scientific reports
|February 28, 2025
PubMed
概括

在InN/InGaN量子井中的拓绝缘器相对量子井和屏障宽度都很敏感. 更薄的屏障显著增强了拓绝缘器阶段,有助于实验验证.

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