V-NAND

Yongha Kim1, Seungjun Ryu2, Sungryung Lee2

  • 1School of Mechanical Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea. yongha_kim@cnu.ac.kr.

Scientific reports
|March 2, 2025
PubMed
概括

一种新的建模方法简化了V-NAND闪存的热电结构分析,考虑了朱尔加热效应. 这种方法增强了V-NAND闪存集成,并为未来的半导体设计创造了一个有价值的数据库.

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