相关实验视频

Updated: May 24, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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来自HfO2和ZnO/HfO2薄膜的舒特基设备的电气性能:形态,结构和光学研究

Ayten Seçkin1, Haluk Koralay2

  • 1Basic and Engineering Sciences Central Laboratory Application and Research Center (GUTMAM), Gazi University, Ankara 06560, Turkiye.

ACS omega
|March 3, 2025
PubMed
概括

这项研究表明,将二氧化 (HfO2) 层添加到氧化 (ZnO) / (Si) 二极管中,可以改善它们的电子性能. 该HfO2层减少了泄漏电流,提高了设备可靠性,用于更好的电子应用.

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