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Updated: May 24, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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在Nb-Doped WSe2中,从退化状态到非退化状态的维度诱导过渡2

Kaito Kanahashi1, Itsuki Tanaka1, Tomonori Nishimura1

  • 1Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan.

ACS nano
|March 3, 2025
PubMed
概括

在过渡金属二甲基化物 (TMDCs) 中的替代性兴奋剂会改变临界兴奋剂水平. 二维 (2D) TMDCs需要更高的兴奋剂度来成为退化的半导体,而不是他们的三维 (3D) 批量对应物.

关键词:
这就是WSe2Se2.临界的兴奋剂水平.补充剂离子 激活能量替代性兴奋剂是一种替代性兴奋剂.从3D到2D的转变.两个维的材料是二维材料.

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