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相关概念视频

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

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Silicon Microchips for Manipulating Cell-cell Interaction
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一个可编程的CMOS DEP芯片用于细胞操纵

Wen-Yue Lin, Lin-Hung Lai, Yi-Wei Lin

    IEEE transactions on biomedical circuits and systems
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    概括
    此摘要是机器生成的。

    这项研究引入了一个可编程二电电泳 (DEP) 芯片,用于精确的实时控制细胞运动和模式. 可重新配置的CMOS芯片使生物应用的先进细胞操纵成为可能.

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    科学领域:

    • 生物技术是生物技术.
    • 微流体学 微流体学
    • 电气工程 电气工程

    背景情况:

    • 精确控制细胞操纵对于各种生物应用至关重要,包括药物查和组织工程.
    • 现有的细胞操纵方法往往缺乏实时控制和重新配置性.
    • 压电泳 (DEP) 提供了一种无标签的方法来操纵生物颗粒,但其空间控制可能具有挑战性.

    研究的目的:

    • 开发一种可编程的CMOS芯片,用于实时,空间控制的电解电泳 (DEP) 力.
    • 为了实现先进的细胞操纵技术,包括单细胞操纵和多细胞模式.
    • 为了证明芯片在生物应用中的实用性,例如细胞制备和药物查.

    主要方法:

    • 使用标准的0.18微米CMOS工艺制造了一组128x128个别可控制的微电极阵列.
    • 实施了时间共享模式,以提高操纵精度并创建明显的相位边界.
    • 该芯片以1.8V的电压运行,可以达到高达27微米/秒的粒子操纵速度.

    主要成果:

    • 证明了对DEP力空间分布的实时控制,用于控制细胞运动.
    • 在同一芯片上实现了精确的单细胞操纵,多细胞模式和度控制.
    • 经过操纵后确认细胞活力和证明干细胞聚合控制.

    结论:

    • 可编程的CMOS DEP芯片为先进的细胞操纵提供了一个多功能平台.
    • 芯片的重新配置性和精度解决了细胞制备和生物测试中的关键技术挑战.
    • 这项技术对药物查,组织工程和基本生物学研究的应用具有重大前景.