Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOS Capacitor01:25

MOS Capacitor

666
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
666

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Response to DellaPergola and Zlochin.

The Lancet. Global health·2026
Same author

Contraceptive knowledge and related factors among male and female U.S. veterans of reproductive age.

Contraception·2026
Same author

Violent and non-violent death tolls for the Gaza conflict: new primary evidence from a population-representative field survey.

The Lancet. Global health·2026
Same author

A Power-Efficient Coplanar Waveguide Design for Enhanced Optical Readout in h-BN Quantum Sensors.

Nano letters·2025
Same author

Atorvastatin Protects Against the Macrophage/Microglia-Related Neuroinflammation via Inhibiting Lipocalin-2 in Mouse Experimental Intracerebral Hemorrhage Model.

Cellular and molecular neurobiology·2025
Same author

Effect of surgical resection extent on neurological prognosis of adult intradural spinal teratomas.

Acta neurochirurgica·2024
Same journal

Correction to "Ultrasonication-Triggered Ubiquitous Assembly of Magnetic Janus Amphiphilic Nanoparticles in Cancer Theranostic Applications".

Nano letters·2026
Same journal

Tunable Proximity Valley Splitting Via Interfacial Exchange Pinning in WSe<sub>2</sub>-CrBr<sub>3</sub>-CrPS<sub>4</sub> Heterostructures.

Nano letters·2026
Same journal

Nanoscale Organization of Membrane Tension during Neutrophil Extracellular Trap Formation Revealed by Fluorescence Lifetime Imaging.

Nano letters·2026
Same journal

Pressure-Tuned Plasmonic Propagation on a Silver Nanowire.

Nano letters·2026
Same journal

Intrinsic Superconducting Gap in Bilayer KCa<sub>2</sub>Fe<sub>4</sub>As<sub>4</sub>F<sub>2</sub> and Decoupled Monolayer FeAs.

Nano letters·2026
Same journal

Programmable Hydrogen-Assisted Chemical Vapor Deposition Growth and Bipolar Transport in Two-Dimensional MoO<sub>2</sub> Nanoflakes.

Nano letters·2026
查看所有相关文章

相关实验视频

Updated: May 24, 2025

Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

9.9K

通过NiO/Cu双层结构进行高效连续旋转导.

Biswajit Sahoo1,2, Christopher Safranski1, Guohan Hu1

  • 1IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States.

Nano letters
|March 4, 2025
PubMed
概括
此摘要是机器生成的。

这项研究表明,铜层增强了基于NiO的设备中的自旋电流传输,这对于可靠的纳米磁铁内存至关重要. 这为先进的自旋电子应用改进了电荷-自旋分离.

关键词:
旋转 - 电荷分离的分离漂移-扩散旋转转运输马格诺尼克旋转运输金属/绝缘体多层的多层旋转扭矩铁磁共振的旋转扭矩.

更多相关视频

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

7.6K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.2K

相关实验视频

Last Updated: May 24, 2025

Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

9.9K
Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
09:20

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

7.6K
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.2K

科学领域:

  • 这就是Spintronics.
  • 材料科学 材料科学 材料科学
  • 纳米技术 纳米技术

背景情况:

  • 旋转轨道扭矩 (SOT) 设备对于纳米磁铁内存至关重要.
  • 有效的电荷和旋转电流分离对于SOT设备的性能至关重要.
  • 氧化 (NiO) 是一种绝缘材料,具有与这些设备相关的自导特性.

研究的目的:

  • 为了研究一个旋转透明的铜 (Cu) 层在促进通过NiO的旋转电流传输方面的有效性.
  • 分析NiO厚度对Pt/NiO/Cu/NiFe堆中旋转电流传导的影响.
  • 为了证明在自旋电子应用中提高电荷-自旋分离和设备可靠性的潜力.

主要方法:

  • 从不同厚度的NiO多层堆Pt/NiO/Cu/NiFe制造纳米桥.
  • 使用直流偏差依赖的旋转扭矩铁磁共振 (ST-FMR) 来测量旋转电流传导.
  • 描述Cu间隔层和NiO层的旋转透明度和传输效率.

主要成果:

  • 一个高度旋转透明的Cu间隔器 (93%的效率) 被证实.
  • 通过无缺陷的NiO/Cu双层实现了超过40%的旋转电流传输,用于NiO厚度大于1.5nm的NiO.
  • Pt/NiO/Cu/NiFe堆证明了有效的电荷电流封闭和旋转电流传输.

结论:

  • 加入一个Cu层显著增强了跨NiO的旋转电流传输,改善了电荷-旋转分离.
  • 这种方法确保了统一的磁环境,并防止了不必要的交换相互作用,从而提高了设备的可靠性.
  • 经过证明的无旋转矩从磁铁转换为电子传输,为基于旋转电流的新型设备设计打开了道路.