人工创建新兴的界面抗铁磁性及其操纵在磁性范德瓦尔斯异构结构中
Xiangqi Wang1, Cong Wang2,3, Yupeng Wang4
1Testing Center, Jihua Laboratory, Foshan 528000, China.
ACS nano
|March 4, 2025
概括
研究人员在范德瓦尔斯 (vdW) 异构结构中发现了新兴的界面反铁磁. 这种在铁磁体-反铁磁体接口上观察到的磁性取决于压力,对自旋电子设备至关重要.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 二维 (2D) 范德瓦尔斯 (vdW) 磁铁提供了独特的纳米级磁性.
- 在vdW异构结构中的界面磁性在很大程度上仍未被探索.
- 了解新兴磁性是新型电子设备的关键.
研究的目的:
- 在vdW异构结构中的铁磁体-反铁磁体接口上研究新兴的界面磁性.
- 为了描述这种新兴磁性的压力依赖性.
- 阐明驱动界面磁相互作用的潜在机制.
主要方法:
- 制造具有铁磁和反铁磁层的VDW异构结构.
- 测量异常的霍尔效应以检测界面磁性.
- 应用可变压力来研究磁性相位过渡.
- 理论计算 (例如,DFT) 以了解电荷转移和旋转交换相互作用.
主要成果:
- 发现一个中间的霍尔电阻高原,表明出现的界面反铁磁.
- 观察到这个平原是可调节的压力高达10 GPa.
- 确定在接口上的电荷转移对于中间层反铁磁自旋交换至关重要.
- 在增加的压力下,介面磁性的逐渐演变的演示.
结论:
- 新兴的界面抗铁磁现象存在于铁磁体-抗铁磁体 vdW 界面.
- 接口磁性可以通过外部压力来控制.
- 电荷转移在跨VDW接口的磁相互作用中起着至关重要的作用.
- 这些发现有助于我们更好地理解用于自旋电子的vdW磁接口.
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