在玻璃半导体中的电导机制
Arkady Kurnosov1,2, Vassiliy Lubchenko1,3,4
1Department of Chemistry, University of Houston, Houston, TX 77204-5003.
概括
在玻璃半导体中,电荷载体是与拓缺陷相结合的特殊极子. 它们的导电性在玻璃过渡附近显示出明显的斜率变化,随着融化的脆弱性而增加.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学是一种材料科学.
- 无形半导体是无形的半导体.
背景情况:
- 了解玻璃半导体中的电荷传输对于电子应用至关重要.
- 这些无序材料中电荷载体的性质仍然是一个关键的研究问题.
研究的目的:
- 为了确定玻璃半导体合金中占主导地位的电荷载体.
- 解释玻璃过渡附近电导率的温度依赖.
主要方法:
- 电荷载体作为与拓格子缺陷结合的极子的理论建模.
- 分析状态的空间密度及其与缺陷诱导的电子负性调制的关系.
- 调查合作体大小对结构放松的温度依赖性.
主要成果:
- 标识的电荷载体是电子或孔,与密切的对拓缺陷相结合,类似于极子.
- 通过独立的拓缺陷的电子负性调制的长度尺度来确定状态的空间密度.
- 预测在玻璃过渡附近的电导率斜率的跳跃,取决于融的脆弱性.
结论:
- 拟议的极子模型准确地解释了玻璃半导体中的电导率的行为.
- 导电性的温度依赖性,包括预测的斜率跳跃,与实验观测一致.
- 这项研究为了解无序材料中的电荷运输提供了一个新的框架.
更多相关视频
05:39Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
9.5K
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
12.2K
相关概念视频
Semiconductors
520
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
520
Band Theory
14.9K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
14.9K
Metal-Semiconductor Junctions
278
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
278
Theory of Metallic Conduction
1.3K
The conduction of free electrons inside a conductor is best described by quantum mechanics. However, a classical model makes predictions close to the results of quantum mechanics. It is called the theory of metallic conduction.
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
1.3K
Types of Semiconductors
476
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
476
Fermi Level Dynamics
216
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
216
