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在基于Sol-Gel AlO浮式门晶体管中的电荷捕获和突触可塑性的热化驱动调制

Sneha Bhise¹, Young-Seok Song¹, Dae-Hong Kim¹

¹Department of Flexible and Printable Electronics, LANL-JBNU Engineering Institute-Korea, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea.

ACS applied materials & interfaces

|March 5, 2025

概括

这项研究优化了sol-gel氧化 (AlO) 对于高性能有机浮式门内存和突触设备. 在200°C的火显著改善了突触行为,在深度神经网络模拟中达到93.60%的准确性.

科学领域:

材料科学材料科学材料科学
电子工程电子工程
纳米技术纳米技术

背景情况:

高性能突触设备和有机浮动门内存对于下一代电子产品至关重要,使低功耗和高密度数据存储成为可能.
对于这些设备来说,有效的电荷捕获层是必不可少的,但合适的材料仍然是一个挑战.
溶液加工的氧化 (AlO) 为电荷捕获应用提供了具有成本效益和灵活性的替代方案.

研究的目的:

为了研究sol-gel氧化 (AlO) 薄膜的特性,在各种温度下化,用于充电捕获层.
为了评估基于sol-gel AlO的浮式门晶体管在模拟突触行为的性能.
为了优化热温度,增强突触特征,如非线性 (NL) 和动态范围 (DR).

主要方法:

处理AlO薄膜的Sol-gel处理方法.
薄膜在从原始到500°C的温度下火.
使用X射线衍射,原子力显微镜和X射线光电子谱学的表征.
制造和测试浮式门晶体管用于突触行为模拟,包括对NL和DR的分析.
使用MNIST数据集进行深度神经网络模拟,以评估设备的准确性.

主要成果:

化AlO薄膜导致有机残留物分解并转化为氧化,而基组影响了歇斯底里.
经过200°C以上冷的设备表现出更好的NL和DR特性.
在200°C时炼的基于AlO的装置在200ms的脉冲宽度下在MNIST模拟中达到93.60%的高精度.

结论:

热温度是优化突触器件中sol-gel AlO性能的一个关键参数.
经过200°C炼的AlO薄膜显示了需要高效的突触模拟的先进电子应用的巨大潜力.
这项工作有助于开发更高效,更灵活,更密集的电子设备用于内存和神经形态计算.

关键词:

氧化的氧化的氧化.浮动门晶体管是浮动门的晶体管.自组装的单层单层.解决方案的过程解决方案的过程突触性可塑性突触性可塑性

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