穿孔多层薄膜中的拓保护磁结构
Magadeev Eugene Borisovich1, Ratmir Rimovich Nugumanov1, Sharafullin Ildus Fanisovich1
1Laboratory Design of new materials, Ufa University of Science and Technology, 32, Zaki Validy str., Ufa 450076, Russia.
概括
这项研究探讨了薄铁磁膜,揭示了特定结构如何创造新的磁性质. 这些片可以作为新的记忆细胞,使用磁域壁和穿孔来编码数据.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 薄铁磁膜对于磁性存储技术至关重要.
- 了解磁性异构和域壁行为是开发先进记忆器件的关键.
- 易轴和易平面材料的分层结构提供了独特的磁性.
研究的目的:
- 从理论上研究分层铁磁膜的磁性特性.
- 探索有效异构的形成和新的轻松磁化方向.
- 分析域壁结构及其对数据存储应用的潜力.
主要方法:
- 薄铁磁薄膜的理论建模,具有分层结构.
- 分析由材料分层产生的有效异构性.
- 在磁化过渡期间研究域壁 (DW) 结构.
- 在穿孔膜中对拓保护的异质性进行调查.
主要成果:
- 有效的异质性可以在层叠的薄膜中出现,形成两个独立的轻松磁化轨道.
- 对这些轨道之间的过渡进行了分析.
- 薄膜中的穿孔可以导致具有六个不同的状态的拓保护不均性.
- 配对穿孔作为基6数据编码的记忆细胞.
结论:
- 多层铁磁薄膜具有可调节的磁性,适合新型应用.
- 拟议的系统为使用磁域墙的高密度数据存储提供了一个新的范式.
- 片中的配对穿孔可以作为独立的记忆细胞起作用,使得基6数据记录成为可能.
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